Photoresponse of the Al/n-Si Schottky diode with nanorod ZnO interface layer prepared by hydrothermal method

In this study, ZnO nanorods (ZnO-NR) were prepared on n-Si wafer by hydrothermal method. Structural and morphologic properties of nanostructures investigated through XRD SEM The illumination impacts the current-voltage (I-V) measurements Al/ZnO-NR/n-Si diode explored in dark different intensities (20–100 mW/cm2) between ± 1.5 V bias voltage range. Schottky barrier height value had an increasing trend with intensity from 20 to 100 mW/cm2 while ideality factor a decreasing increase photocurrent. temporary photocurrent increases as increases. slope (α) logI_ph-logP curve was obtained 0.618 confirmed that nanorod shows photoconducting behavior. short-circuit current (I_sc) open-circuit (V_oc) values be 774.08 μA 0.24 under intensity, respectively. It concluded can used optoelectronic applications, especially for photodiode industry.